Vishay IRL630STRRPBF

Single N-Channel 200 V 0.4 Ohms Surface Mount Power Mosfet - D2PAK
$ 0.82
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

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DistributorSKUMinPkg
TME
2
IRL630STRRPBF0800
23h
Component Stockers USAIRL630STRRPBF17.405
1d
Weyland Electronics Group Pte. Ltd.IRL630STRRPBF5601Tape & Reel
12h
Win SourceWS-IRL630STRRPBF4.80030
11h
Shenzhen Glow Technology Co., Ltd2041411Kontakt10
>1w

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IHS

Datasheet10 SeitenVor 5 Jahren

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Future Electronics

Alternative Teile

Dieser Teil
Alternative Teile
VishayIRL630STRRPBF
VishayIRL630SPBF
VishayIRL630SPBF
Price @ 1000
$ 0.82
$ 1.533
$ 1.533
Stock
86,082
28,903
28,903
Authorized Distributors
1
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
200 V
Continuous Drain Current (ID)
9 A
9 A
9 A
Threshold Voltage
-
-
-
Rds On Max
400 mΩ
400 mΩ
400 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
10 V
Power Dissipation
3.1 W
3.1 W
3.1 W
Input Capacitance
1.1 nF
1.1 nF
1.1 nF

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-03-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30

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Beschreibungen

Beschreibungen von Vishay IRL630STRRPBF, die von den Distributoren bereitgestellt werden.

Single N-Channel 200 V 0.4 Ohms Surface Mount Power Mosfet - D2PAK
Future Electronics
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):400mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:SMD-220 ;RoHS Compliant: Yes
Newark

Bilder

Vishay
Future Electronics

Aliasnamen des Herstellers

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