Sharp PT480E00000F
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Lieferkette
Harmonized Tariff Schedule (HTS) Code8541.40.70.80
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Beschreibungen
Beschreibungen von Sharp PT480E00000F, die von den Distributoren bereitgestellt werden.
Phototransistor IR Chip Silicon 800nm 2-Pin / Phototransistor
PHOTOTRANSISTOR, SIDE VIEW; Wavelength Typ: 800nm; Viewing Angle: -; Power Consumption: 75mW; No. of Pins: 2Pins; Transistor Case Style: Side Looking; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC
PHOTOTRANSISTOR, SIDE VIEW; Transistor Type:Phototransistor; Half Angle:13°; Wavelength, Spectral Response Peak:800nm; Case Style:Radial; Nom Sensitivity @ mW/cm2:1.7mA@1mW/cm2; Current, Ic Typ:1.7mA; Rise Time:3µs; Operating ;RoHS Compliant: Yes
PHOTOTRANSISTOR, SIDE VIEW; Transistor Polarity:NPN; Wavelength Typ:800nm; Power Consumption:75mW; Transistor Case Style:Side Looking; No. of Pins:2; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:0.4V; Continuous Collector Current Ic Max:6mA; Current Ic Typ:1.7mA; Dark Current:100nA; External Depth:2.8mm; External Length / Height:4.0mm; External Width:3.0mm; Fall Time tf:3.5µs; Half Angle:13°; Lead Diameter:0.4mm; Lead Length:17.5mm; Lead Spacing:2.54mm; Nom Sensitivity @ mW/cm²:1.7mA @ 1mW / cm²; Operating Temperature Max:85°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +85°C; Package / Case:Radial; Peak Spectral Response Wavelength:800nm; Peak Wavelength:800nm; Power Dissipation Pd:75mW; Power Dissipation Pd:75mW; Reverse Protection Voltage:6V; Rise Time:3µs; Storage Temperature Max:85°C; Storage Temperature Min:-40°C; Transistor Type:Photo
Aliasnamen des Herstellers
Sharp verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Sharp ist möglicherweise auch unter den folgenden Namen bekannt:
- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
Bestandsverlauf
3-Monats-Trend: Restocked
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Technische Spezifikationen
Physical
Case/PackageRadial
Lens ColorClear
MountThrough Hole
Number of Pins2
ShapeRound
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)6 V
Dark Current100 nA
Fall Time3.5 µs
Lens StyleDomed
Max Collector Current20 mA
Max Operating Temperature85 °C
Max Power Dissipation75 mW
Min Operating Temperature-25 °C
Number of Circuits1
Number of Elements1
OrientationSide View
Output Current20 mA
Peak Wavelength800 nm
PolarityNPN
Power Consumption75 mW
Power Dissipation75 mW
Rise Time3 µs
Wavelength800 nm
Dimensions
Lead Length17.5 mm
Width3 mm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant