Sharp PT4800E0000F

SENSOR PHOTO 800NM SIDE VIEW RAD / Phototransistors 800nm Side View Radial
Production
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DistributorSKUMinPkg
element14 APACPT4800E0000F01
3h
FarnellPT4800E0000F01
7h
Win SourceWS-PT4800E0000F88.700175
9h
Worldway ElectronicsPT4800E0000F19.4517Tube
1d
Fly-Wing TechnologyPT4800E0000F78.152
2d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Sharp PT4800E0000F herunter.

IHS

Datasheet9 SeitenVor 18 Jahren

element14 APAC

DigiKey

Lieferkette

Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Beschreibungen

Beschreibungen von Sharp PT4800E0000F, die von den Distributoren bereitgestellt werden.

SENSOR PHOTO 800NM SIDE VIEW RAD / Phototransistors 800nm Side View Radial
Win Source
Phototransistor Chip 800nm 2-Pin Thin Type
Avnet
SHARP PT4800E0000F PHOTOTRANSISTOR
Fly-Wing Technology
Photo transistor 3mm Side View 800nm 70d
RS (Formerly Allied Electronics)
PHOTO TRANS CLEAR LEN 800NM SIDE
DigiKey
PHOTOTRANSISTOR; Wavelength Typ: 800nm; Viewing Angle: 35°; Power Consumption: 75mW; No. of Pins: 2Pins; Transistor Case Style: Side Looking; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2
Farnell
PHOTOTRANSISTOR; Transistor Polarity:NPN; Wavelength Typ:800nm; Power Consumption:75mW; Viewing Angle:35°; Transistor Case Style:Side Looking; No. of Pins:2; Angle of Half Sensitivity ±:35°; Collector Emitter Voltage Vces:0.4V; Continuous Collector Current Ic Max:20A; Current Ic Typ:400mA; Dark Current:100nA; External Depth:1.5mm; External Length / Height:3.5mm; External Width:3mm; Fall Time tf:3.5µs; Lead Length:17.5mm; Lead Spacing:2.54mm; Operating Temperature Max:85°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +85°C; Peak Wavelength:800nm; Rise Time:3µs; Storage Temperature Max:+85°C; Storage Temperature Min:-40°C; Transistor Type:Photo
element14 APAC

Bilder

element14 APAC
RS

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  • Socle Technology Corporation
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  • SHARP Datasheet
  • SHARP/Socle
  • SOCLE Technology