SCHOTTKY RECT, 30V, 1A, DSN2; Repetitive Reverse Voltage Vrrm Max: 30V; Forward Current If(AV): 1A; Diode Configuration: Single; Diode Case Style: DSN; No. of Pins: 2Pins; Forward Voltage VF Max: 470mV; Forward Surge Current Ifsm Max: 18A; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2018); Semiconductor Technology: Si

Farnell

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.

North Star Micro

Bilder

Newark

Rochester Electronics

LZChips

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SCG
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onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
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Technische Spezifikationen

Physical

Case/Package0502

Number of Pins2

Number of Terminals2

Technical

Average Rectified Current1 A

Element ConfigurationSingle

Forward Current1 A

Forward Voltage420 mV

Max Forward Surge Current (Ifsm)18 A

Max Operating Temperature125 °C

Max Output Current1 A

Max Power Dissipation1.47 W

Max Repetitive Reverse Voltage (Vrrm)30 V

Max Reverse Leakage Current20 µA

Max Reverse Voltage (DC)30 V

Max Surge Current18 A

Min Operating Temperature-40 °C

Number of Elements1

PackagingTape and Reel

Peak Non-Repetitive Surge Current18 A

Peak Reverse Current100 µA

Power Dissipation548 mW

Reverse Standoff Voltage30 V

Schedule B8541100080

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi NSR10F30NXT5G herunter.