onsemi MUN5131T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
$ 0.017
Production
HerstellerseiteDatenblatt

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DistributorSKUMinPkg
Avnet
2
MUN5131T1G126.00045K
2d
Verical
9
MUN5131T1G45.00020135
Arrow ElectronicsMUN5131T1G21.7651
Rochester ElectronicsMUN5131T1G721.000
1d
DigiKey
3
488-MUN5131T1GCT-ND8.3801Cut Tape

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi MUN5131T1G herunter.

IHS

Datasheet13 SeitenVor 4 Jahren

Electro Sonic

onsemi

Newark

Future Electronics

Bestandsverlauf

3-Monats-Trend:
+11.28%
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Alternative Teile

Dieser Teil
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onsemiMUN5131T1G
onsemiMUN5131T1
Price @ 1000
$ 0.017
$ 0.044
Stock
3,807,941
300,864
Authorized Distributors
6
2
Mount
-
Surface Mount
Case/Package
SC
-
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
-
-
hFE Min
8
8
Power Dissipation
202 mW
202 mW

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi MUN5131T1G, die von den Distributoren bereitgestellt werden.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
IHS
MUN Series 50 V 100 mA 2.2 kOhm PNP Silicon Bias Resistor Transistor - SOT-323
Future Electronics
Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R
Verical
PNP Bipolar Digital Transistor (BRT)
onsemi
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Digi-ic_SMART PIONEER
Brt Transistor, 50V, 2.2K/2.2Kohm, Sc70, Full Reel; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi MUN5131T1G
Newark
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
North Star Micro

Bilder

TME
Newark
Future Electronics
Rochester Electronics

Aliasnamen des Herstellers

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  • ONS
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  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd