onsemi ISL9R860P2

Diode Ultra Fast Recovery Rectifier 600V 8A 2-Pin (2+Tab) TO-220AC Rail
Obsolete
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DistributorSKUMinPkg
element14 APACISL9R860P2...01
1d
Component Stockers USAISL9R860P221.951
1d
Win SourceWS-ISL9R860P25195
13h
Worldway ElectronicsISL9R860P216.9887Tube
11h
SHENGYU ELECTRONICSISL9R860P218.6911
3d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi ISL9R860P2 herunter.

Newark

Datasheet11 SeitenVor 4 Jahren
Datasheet0 SeitenVor 0 Jahren
Datasheet0 SeitenVor 0 Jahren

IHS

Upverter

Fairchild Semiconductor

Future Electronics

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2000-09-13
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-01-08
LTD Date2022-07-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi ISL9R860P2, die von den Distributoren bereitgestellt werden.

Diode Ultra Fast Recovery Rectifier 600V 8A 2-Pin (2+Tab) TO-220AC Rail
Verical
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
IHS
DIODE GEN PURP 600V 8A TO220AC / Rectifier Diode Switching 600V 8A 30ns 2-Pin(2+Tab) TO-220 Tube
Win Source
ISL9 Series 600 V 8 A Through Hole Standard Stealth Diode - TO-220-2
Future Electronics
DIODE, ULTRAFAST, 8A, 600V; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:2.4V; Reverse Recovery Time trr Max:18ns; Forward Surge Current Ifsm Max
element14 APAC
DIODE, ULTRAFAST, 8A, 600V; Diode Type:Soft Recovery; Voltage, Vrrm:600V; Current, If AV:8A; Current, Ifsm:100A; Time, trr Typ:25ns; Voltage, Vf Max:2.4V; Temperature, Tj Max:175°C; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Case Style:TO-220AC; No. of Pins:2; Current, Ifs Max:100A; Forward Voltage:2V; Time, trr Max:18ns; Current, Ifrm:16A
Farnell
The ISL9R860P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Fairchild Semiconductor

Bilder

RS
Conrad
Future Electronics
Farnell
Newark
TME

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