onsemi ISL9N302AP3

TO-220AB, Single, Nch, 30V, 0.0023 Ohm Logic Level Dense Trench
Obsolete
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DistributorSKUMinPkg
FarnellISL9N302AP301
1d
Win SourceWS-ISL9N302AP38.30021
9h
Worldway ElectronicsISL9N302AP38.6447Tube
8h
SHENGYU ELECTRONICSISL9N302AP312.9191
3d
Run Hong ElectronicsISL9N302AP37.240
20h

Datenblätter und Dokumente

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IHS

Datasheet10 SeitenVor 24 Jahren

Newark

Farnell

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-31
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Beschreibungen

Beschreibungen von onsemi ISL9N302AP3, die von den Distributoren bereitgestellt werden.

TO-220AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH
Avnet
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Newark
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:75A; Resistance, Rds On:0.0019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; Termination Type:Through Hole; No. of Pins:3; Power Dissipation:345mW; Voltage, Vds Max:30V
Farnell

Bilder

Newark
Rochester Electronics

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