onsemi HGTG12N60C3D

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
$ 2.393
Obsolete
HerstellerseiteDatenblatt

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DistributorSKUMinPkg
Arrow ElectronicsHGTG12N60C3D11
Rochester ElectronicsHGTG12N60C3D36
5h
element14 APACHGTG12N60C3D01
17h
FarnellHGTG12N60C3D01
4h
Win SourceWS-HGTG12N60C3D7.80045
6h

Datenblätter und Dokumente

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IHS

Datasheet9 SeitenVor 4 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Farnell

Fairchild Semiconductor

Newark

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-01-01
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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Beschreibungen

Beschreibungen von onsemi HGTG12N60C3D, die von den Distributoren bereitgestellt werden.

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
onsemi
Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Rail
Verical
IGBT, N, 3-TO-247; DC Collector Current: 24A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 104W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati
Farnell
Single Igbt, 600V, 24A; Collector Current:24A; Power Dissipation:104W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi HGTG12N60C3D
Newark
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dorp varies only moderately 25°C and 150°C. The IBGT used is the development type TA49123. The diode in anti parallel with the IGBT is the development type TA49061.The IGBT is ideal for mant high voltage switching applications operating at moderate frquencies where low conduction losses are essential.Formerly Developmental Type TA49117.
Fairchild Semiconductor

Bilder

element14 APAC
Newark
Farnell
TME
Conrad
Rochester Electronics

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