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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
Verwandte Teile
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250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
Beschreibungen
Beschreibungen von onsemi FQPF34N20, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 200V 17.5A TO-220F
Power Field-Effect Transistor, 17.5A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL POWER MOSFET
MOSFETs 200V N-Channel QFET
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:17.5A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:70A; No. of Pins:3; Power Dissipation:55W; Power, Pd:55W; Voltage, Vds Max:200V
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17.5 A
Current Rating17.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.1 nF
Max Operating Temperature150 °C
Max Power Dissipation55 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation55 W
Rds On Max75 mΩ
Rise Time280 ns
Turn-Off Delay Time125 ns
Voltage Rating (DC)200 V