onsemi FQP2N60C

Name: onsemi FQP2N60C
Brand: onsemi
SKU: FQP2N60C

Power Mosfet, N-channel, Qfet®, 600 V, 2 A, 4.7 Ω, TO-220

Obsolete

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Distributor	SKU		Min	Pkg
Win Source	WS-FQP2N60C	1.760	190					0,207	0,179	13h
Worldway Electronics	FQP2N60C	20.811	7	Tube		0,061	0,059	0,056	0,056	11h
Aztech	FQP2N60C	4.225			0,510	0,510	0,510	0,510	0,510	8h
Chipsmall Limited	FQP2N60C	200.000	1		0,205	0,137	0,082	0,068	0,068	18h
Anlinkda	FQP2N60C	47.785			1,058	0,948	0,814	0,793	0,762	11h

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IHS

Datasheet10 SeitenVor 12 Jahren

Newark

Future Electronics

onsemi

element14 APAC

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onsemiFQP2N60C

onsemiFQP2N60

Price @ 1000

$ 1.074

Stock

393,501

1,473,514

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

TO-220

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

2 A

2.4 A

Threshold Voltage

4 V

Rds On Max

4.7 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

54 W

64 W

Input Capacitance

235 pF

350 pF

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-10-02

Lifecycle StatusObsolete (Last Updated: 4 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

Beschreibungen

Beschreibungen von onsemi FQP2N60C, die von den Distributoren bereitgestellt werden.

Power MOSFET, N-Channel, QFET®, 600 V, 2 A, 4.7 Ω, TO-220

onsemi

Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 600V 2A TO-220

Win Source

Single N-Channel 600 V 4.7 Ohm 12 nC 54 W DMOS Mosfet - TO-220-3

Future Electronics

2.0 A, 600 V N-CHANNEL MOSFET Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:1.35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:4.7ohm; Package / Case:TO-220; Power Dissipation Pd:54W; Power Dissipation Pd:54W; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

Bilder

Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

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Technische Spezifikationen

Physical

Case/PackageTO-220-3

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight1.8 g

Technical

Continuous Drain Current (ID)2 A

Current Rating2 A

Drain to Source Breakdown Voltage600 V

Drain to Source Resistance4.7 Ω

Drain to Source Voltage (Vdss)600 V

Dual Supply Voltage600 V

Element ConfigurationSingle

Fall Time28 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance235 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation54 W

Min Breakdown Voltage600 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Channels1

Number of Elements1

PackagingCut Tape (CT)

Power Dissipation54 W

Rds On Max4.7 Ω

Resistance4.7 Ω

Rise Time25 ns

Schedule B8541290080

TerminationThrough Hole

Threshold Voltage4 V

Turn-Off Delay Time24 ns

Turn-On Delay Time9 ns

Voltage Rating (DC)600 V

Dimensions

Height20.4 mm

Length10.1 mm

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi FQP2N60C herunter.