onsemi FQP12N60

600V N-channel Mosfet | Mosfet N-ch 600V 10.5A TO-220
$ 1.485
Obsolete
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DistributorSKUMinPkg
Verical
2
FQP12N609.376189
Rochester ElectronicsFQP12N609.664
39m
Component Stockers USAFQP12N6014.357
15h
Win SourceWS-FQP12N605.00060
2h
Worldway ElectronicsFQP12N6029.2787Tube
1d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi FQP12N60 herunter.

IHS

Datasheet8 SeitenVor 25 Jahren

DigiKey

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
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Beschreibungen

Beschreibungen von onsemi FQP12N60, die von den Distributoren bereitgestellt werden.

600V N-Channel MOSFET | MOSFET N-CH 600V 10.5A TO-220
Win Source
Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
N-CHANNEL POWER MOSFET
Fly-Wing Technology
Optocouplers .
Mouser
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):700mohm; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; On State Resistance Max:700mohm; Package / Case:TO-220 (SOT-78B); Power Dissipation Pd:180W; Power Dissipation Pd:180W; Pulse Current Idm:42A; Voltage Vgs th Max:5V
element14 APAC

Bilder

Farnell
Rochester Electronics

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