onsemi FQA24N60

N-Channel Power MOSFET, QFET®, 600V, 23.5A, 240mΩ, TO-3P
$ 4.1
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FQA24N601832
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FQA24N601.9611
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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi FQA24N60, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, QFET®, 600V, 23.5A, 240mΩ, TO-3P
onsemi
Transistor: unipolar, N-MOSFET; 600V; 23.5A; 310W; TO3P
Fly-Wing Technology
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:23.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):240mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:94A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

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RS APAC
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Farnell
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Rochester Electronics
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