onsemi FGA30S120P

IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube
$ 3.657
EOL
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Technical Drawing1 SeiteVor 6 Jahren

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onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-12-12
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)

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Beschreibungen

Beschreibungen von onsemi FGA30S120P, die von den Distributoren bereitgestellt werden.

IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
IGBT, 1300V, 30A, Shorted-anode
Insulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel
IGBT Transistors Shorted AnodeTM IGBT
晶体管, IGBT, 1.3KV, 60A, 175度 C, 348W;
IGBT TRENCH/FS 1300V 60A TO3PN
INSULATED GATE BIPOLAR TRANSISTO
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

Aliasnamen des Herstellers

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  • ON Semiconductor
  • ONS
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  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd