onsemi FDU8882
$ 0.604
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDU8882 | 518 | 464 | |||||||||
| Rochester Electronics | FDU8882 | 518 | 12h | |||||||||
| Farnell | FDU8882 | 0 | 1 | 1d | ||||||||
| Microchip USA | FDU8882 | 323 | 600 | Tube | 5h | |||||||
| Win Source | WS-FDU8882 | 7.000 | 11 | 13h |
Bestandsverlauf
3-Monats-Trend: Restocked
CAD-Modelle
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
Verwandte Teile
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 56A;I-Pak (TO-251AA);PD 50W
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Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
onsemiNTD4810N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
onsemiNTD4979N-35G
MOSFET N-CH 30V 9.4A IPAK TRIMME / Trans MOSFET N-CH 30V 12.7A 3-Pin(3+Tab) IPAK Rail
Beschreibungen
Beschreibungen von onsemi FDU8882, die von den Distributoren bereitgestellt werden.
Power MOSFET, N Channel, 30 V, 55 A, 0.0115 ohm, TO-251AA, Through Hole
Trans MOSFET N-CH 30V 55A 3-Pin (3+Tab) TO-251 Rail
30V,55A,11 OHM, NCH, IPAK, POWER TRENCH MOSFET
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
003, PLASTIC MOLDED, TO-251 IPAK PKG, THRU-HOLE (39)<AZ
MOSFET N-CH 30V 12.6A/55A IPAK
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Transistor Case Style:I-PAK; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:TO-251; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.8mm; Lead Spacing:2.285mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:55W; Pulse Current Idm:50A; Reverse Recovery Time trr Typ:82ns; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: Restocked
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
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Technische Spezifikationen
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12.6 A
Current Rating55 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.26 nF
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation55 W
Rds On Max11.5 mΩ
Rise Time82 ns
Turn-Off Delay Time40 ns
Voltage Rating (DC)30 V