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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDMS8888 | 248 | 5h | |||||||||
| Mouser | 512-FDMS8888 | 1.044 | 1 | Tape & Reel | ||||||||
| Microchip USA | FDMS8888 | 332 | 3K | Bulk | 21h | |||||||
| Win Source | WS-FDMS8888 | 4.480 | 45 | 6h | ||||||||
| Worldway Electronics | FDMS8888 | 19.168 | 7 | Tape & Reel | 4h |
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3-Monats-Trend: +0.00%
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-07-18
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Beschreibungen
Beschreibungen von onsemi FDMS8888, die von den Distributoren bereitgestellt werden.
N-Channel PowerTrench® MOSFET 30V, 21A, 9.5m
30V 51A 80m´Î@10V13.5A 42W 1.9V@250uA 161pF@15V N Channel 1.195nF@15V 13nC@0~5V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS
MOSFET, N CH, 30V, 21A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS8888 has been designed to minimixe losses in power conversion application. The Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight74 mg
Technical
Continuous Drain Current (ID)13.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.585 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements1
Power Dissipation42 W
Rds On Max9.5 mΩ
Rise Time6 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time9 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen