onsemi FDMS8560S
$ 0.671
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Lieferkette
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-09
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2020-10-09
LTD Date2021-04-09
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Beschreibungen
Beschreibungen von onsemi FDMS8560S, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH Si 25V 30A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 30A 8-PQFN
N-CHANNEL POWERTRENCH SYNCFET Power Field-Effect Transistor, 35A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance4.35 nF
Max Operating Temperature150 °C
Max Power Dissipation65 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.8 mΩ
Rise Time6 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time13 ns
Dimensions
Height1.05 mm
Length5.1 mm
Width5.85 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen