onsemi FDD6676AS

; Transistor Type: MOSFET; Leaded Process Compatible: Yes; Peak Reflow Compatible (260 C): Yes RoHS Compliant: Yes
Obsolete
Datenblatt

Preis und Lagerbestand

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DistributorSKUMinPkg
FarnellFDD6676AS01
1d
Win SourceWS-FDD6676AS7.88975
4h
Worldway ElectronicsFDD6676AS29.3877Tape & Reel
3h
Fly-Wing TechnologyFDD6676AS207.973
1d
AnlinkdaFDD6676AS41.405
11h

Datenblätter und Dokumente

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IHS

Datasheet8 SeitenVor 21 Jahren

DigiKey

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02

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Beschreibungen

Beschreibungen von onsemi FDD6676AS, die von den Distributoren bereitgestellt werden.

; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Newark
Power Field-Effect Transistor, 90A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFETs 30V N-CH DPAK POWR TRENCH SYNCFET
Mouser
30V N-Channel PowerTrench SyncFET
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ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
Jameco
MOSFET, N, SMD, TO-252; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:90A; Resistance, Rds On:0.0057ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:100A; No. of Pins:2; Power Dissipation:70mW; Voltage, Vds Max:30V
Farnell

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