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Lieferkette

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-02-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi FDC6306P, die von den Distributoren bereitgestellt werden.

Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ

onsemi

MOSFET 2P-CH 20V 1.9A SSOT6 / Trans MOSFET P-CH 20V 1.9A 6-Pin TSOT-23 T/R

Win Source

Dual P-Channel 20 V 0.170 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6

Future Electronics

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Fairchild Semiconductor

MOSFET, DUAL, PP, SUPERSOT-6; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:5A; SMD Marking:FCD6306P; Termination Type:SMD; Uni / Bi Directional Polarity:PP; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

element14 APAC

Bilder

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

FDC6306P.
FDC6306P..

Bestandsverlauf

3-Monats-Trend: +76.91%

CAD-Modelle

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Alternative Teile

0 Teile verfügbar

Technische Spezifikationen

Physical

Case/PackageSOT-23-6

Contact PlatingTin

MountSurface Mount

Number of Pins6

Number of Terminals6

Weight36 mg

Technical

Continuous Drain Current (ID)1.9 A

Current Rating-1.9 A

Drain to Source Breakdown Voltage-20 V

Drain to Source Resistance170 mΩ

Drain to Source Voltage (Vdss)-20 V

Dual Supply Voltage-20 V

Element ConfigurationDual

Fall Time9 ns

Gate to Source Voltage (Vgs)8 V

Input Capacitance441 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation960 mW

Min Breakdown Voltage20 V

Min Operating Temperature-55 °C

Nominal Vgs-900 mV

Number of Channels2

Number of Elements2

PackagingCut Tape

Power Dissipation900 mW

Rds On Max170 mΩ

Resistance170 mΩ

Rise Time9 ns

Schedule B8541210080

Threshold Voltage-900 mV

Turn-Off Delay Time14 ns

Turn-On Delay Time6 ns

Voltage Rating (DC)-20 V

Dimensions

Height1.1 mm

Length3 mm

Width1.7 mm

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi FDC6306P herunter.