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Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2016-02-12

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi FCP067N65S3, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220

onsemi

Power Field-Effect Transistor, 44A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Abacus Technologies

MOSFET, N-CH, 650V, 44A, TO-220-3L; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.059ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V;

Farnell

SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancedtechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency

Fairchild Semiconductor

Bilder

Augswan

TME

RS APAC

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Bestandsverlauf

3-Monats-Trend: -12.30%

CAD-Modelle

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Alternative Teile

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Technische Spezifikationen

Physical

Case/PackageTO-220-3

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight1.8 g

Technical

Continuous Drain Current (ID)44 A

Drain to Source Breakdown Voltage650 V

Drain to Source Resistance67 mΩ

Drain to Source Voltage (Vdss)650 V

Element ConfigurationSingle

Gate to Source Voltage (Vgs)30 V

Input Capacitance3.09 nF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation312 W

Min Breakdown Voltage650 V

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

Power Dissipation312 W

Rds On Max67 mΩ

Schedule B8541290080

Threshold Voltage4.5 V

Turn-Off Delay Time89 ns

Turn-On Delay Time26 ns

Dimensions

Height20.4 mm