onsemi FCD1300N80Z

Name: onsemi FCD1300N80Z
Brand: onsemi
SKU: FCD1300N80Z

N-channel Power Mosfet, Superfet® II, 800 V, 4 A, 1.3 Ω, Dpak

$ 1.19

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Distributor		SKU		Min	Pkg
Rochester Electronics		FCD1300N80Z	215					1,190	0,988	0,881	11h
DigiKey	2	FCD1300N80ZCT-ND	1.891	1	Cut Tape	3,100	2,009	1,385	1,070	1,070
Newark	2	FCD1300N80Z	0	1	Cut Tape	3,060	2,160	1,600	1,310	1,310
Onlinecomponents.com		FCD1300N80Z	0	625	Bulk				1,818	0,868
Avnet		FCD1300N80Z	0	2500						0,920	13h

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3-Monats-Trend: -39.19%

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Technical Drawing1 SeiteVor 3 Jahren

Master Electronics

IHS

onsemi

Fairchild Semiconductor

Bestandsverlauf

3-Monats-Trend:

-39.19%

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2014-07-02

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi FCD1300N80Z, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, SUPERFET® II, 800 V, 4 A, 1.3 Ω, DPAK

onsemi

Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Semicontronic

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

Fairchild Semiconductor

Bilder

element14 APAC

Future Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Bestandsverlauf

3-Monats-Trend: -39.19%

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Symbol, Footprint und 3D STEP herunterladen

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Technische Spezifikationen

Physical

Case/PackageTO-252-3

MountSurface Mount

Weight260.37 mg

Technical

Continuous Drain Current (ID)4 A

Drain to Source Breakdown Voltage800 V

Drain to Source Resistance1.05 Ω

Drain to Source Voltage (Vdss)800 V

Element ConfigurationSingle

Fall Time6 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance880 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation52 W

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

PackagingTape & Reel (TR)

Power Dissipation52 W

Rds On Max1.3 Ω

Resistance1.3 Ω

Rise Time8.3 ns

Turn-Off Delay Time33 ns

Turn-On Delay Time14 ns

Dimensions

Height2.517 mm