onsemi FCA36N60NF

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P
$ 4.811
Obsolete
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Rochester ElectronicsFCA36N60NF425
4h
Flip ElectronicsFCA36N60NF1.056
23h
AvnetFCA36N60NF0193
1d
FarnellFCA36N60NF2331
4h
element14 APACFCA36N60NF2331
18h

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Farnell

Datasheet0 SeitenVor 0 Jahren
Datasheet0 SeitenVor 0 Jahren
Datasheet8 SeitenVor 15 Jahren

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onsemi

Fairchild Semiconductor

element14 APAC

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-03-07
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Beschreibungen

Beschreibungen von onsemi FCA36N60NF, die von den Distributoren bereitgestellt werden.

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P
onsemi
N-CHANNEL SUPREMOS FRFET MOSFET Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
MOSFET, N CH, 600V, 34.9A, TO3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:34.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.7V; Power Dissipation Pd:312W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
Farnell
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Fairchild Semiconductor

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Augswan
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Farnell
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