onsemi BCW69

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250mW Surface Mount TO-236AB (SOT23)
$ 0.025
Obsolete
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DistributorSKUMinPkg
Rochester ElectronicsBCW696.875
23h
element14 APACBCW6901
13h
FarnellBCW6901
23h
Win SourceWS-56976558.0001500
1d
Worldway ElectronicsBCW6916.0007Tape & Reel
23h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi BCW69 herunter.

IHS

Datasheet4 SeitenVor 16 Jahren
Datasheet0 SeitenVor 0 Jahren

Farnell

Fairchild Semiconductor

element14

Newark

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-01-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14

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Beschreibungen

Beschreibungen von onsemi BCW69, die von den Distributoren bereitgestellt werden.

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250mW Surface Mount TO-236AB (SOT23)
Avnet
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
IHS
Transistor; Transistor Type:Bipolar; Package/Case:SOT-323; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:100mA; Voltage Rating:45V ;RoHS Compliant: Yes
Newark
TRANSISTOR,PNP,45V,0.1A,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:330mW; DC Collector Current:-100mA; DC Current Gain hFE:90; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:120; Package / Case:SOT-23; Power Dissipation Pd:330mW; Termination Type:SMD
element14 APAC

Bilder

Newark
Rochester Electronics

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