Nexperia PDTC124ET

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
$ 0.016
Production
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Preis und Lagerbestand

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Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
UnikeyIC
PDTC124ET
8
1
USD
0,026
0,023
0,016
0,016
0,016
2d
Component Stockers USA
PDTC124ET
357
USD
99,990
99,990
99,990
99,990
99,990
>1wk
Win Source
WS-PDTC124ET
200.000
2605
USD
0,017
22h
XINVRY
PDTC124ET
38.875
USD
8,850
8,850
8,850
8,850
8,850
3d
Maritex
PDTC124ET-U1
8
1
USD
0,042
0,034
0,023
0,021
0,019
1d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Nexperia PDTC124ET herunter.

IHS

Datasheet18 SeitenVor 3 Jahren
Datasheet0 SeitenVor 0 Jahren
Datasheet0 SeitenVor 0 Jahren

Lieferkette

Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-02-01
Lifecycle StatusProduction (Last Updated: 1 month ago)
LTB Date2004-06-30

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Beschreibungen

Beschreibungen von Nexperia PDTC124ET, die von den Distributoren bereitgestellt werden.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Abacus Technologies
Bipolar Transistors (BJT); PDTC124ET; NEXPERIA; NPN; 3; 50 V; 100 mA
Maritex
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin TO-236AB
Verical
NPN SOT-23 wire mounting，Bracket mounting，SMD mount 1.1mm(height)
UnikeyIC
Bipolar (BJT) single-bipolar transistor
Weyland Electronics Group Pte. Ltd.
100 mA 50 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
Component Stockers USA
TRANSISTOR, DIGITAL, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:60; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:150mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:0mA; Full Power Rating Temperature:25°C; Hfe Min:56; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; Resistance R1:22kohm; Resistance R2:22kohm; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V
element14 APAC

Bilder

Farnell
Augswan
element14 APAC
Farnell
Distrelec
Component Sense

Aliasnamen des Herstellers

Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • Infineon_Nexperia
  • NEXPERIA (FORMERLY NXP) (4001801)