Infineon IRLI520NPBF
$ 2.83
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
CAD-Modelle
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-04-25
LTD Date2011-10-25
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Beschreibungen
Beschreibungen von Infineon IRLI520NPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 8.1A;TO-220 Full-Pak;PD 30W
Single N-Channel 100 V 180 mOhm 13.3 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 8.1A 3-Pin(3+Tab) TO-220FP
MOSFET 11A 100V 100mΩ8.1A 250μA 440pF 30W 20nC TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 100V, 7.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:27W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction to Case Thermal Resistance A:5°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:27W; Power Dissipation Pd:27W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8.1 A
Current Rating8.1 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance440 pF
Isolation Voltage2000 Vrms
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation27 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance180 mΩ
Package Quantity2000
PackagingBulk
Power Dissipation27 W
Rds On Max180 mΩ
Resistance180 MΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time23 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)100 V
Dimensions
Height19.8 mm
Length10.6172 mm
Width4.826 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeContains Lead, Lead Free
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen