Infineon IRFH7932TR2PBF
$ 0.53
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH7932TR2PBF | 0 | 800 | Bulk | 3h | |||||||
| Farnell | IRFH7932TR2PBF | 0 | 1 | 14h | ||||||||
| Worldway Electronics | IRFH7932TR2PBF | 19.924 | 7 | Tape & Reel | 1d | |||||||
| Win Source | WS-IRFH7932TR2PBF | 20 | 15h | |||||||||
| Quest | IRFH7932TR2PBF | 300 | 13h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
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N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8; Transistor Polarity:N Channel; Cont
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N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
Beschreibungen
Beschreibungen von Infineon IRFH7932TR2PBF, die von den Distributoren bereitgestellt werden.
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, 30V, 24A, 3.3MOHM, 34 NC QG, PQFN56
Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R
MOSFET PQFN-8 (5x6) N 30V 25 A
Power Field-Effect Transistor, 25A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):3.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 24A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.27 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation3.1 W
Rds On Max3.3 mΩ
Recovery Time32 ns
Resistance3.3 MΩ
Rise Time48 ns
Threshold Voltage1.8 V
Turn-Off Delay Time23 ns
Turn-On Delay Time20 ns
Dimensions
Height939.8 µm
Length5 mm
Width5.1054 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen