Infineon IRFB4332PBF

IRFB4332PBF N-channel MOSFET Transistor, 60 A, 250 V, 3-Pin TO-220AB

Infineon N-Channel Enhancement MOSFET HEXFET Series, Vds=250V, 60A, TO-220AB Package, TH, 3-Pin

MOSFET N-CH 250V 60A TO220AB N-Channel 250 V 60A (Tc) 390W (Tc) Through Hole TO-220AB

Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3

Trans Mosfet N-Ch 250V 60A 3-Pin(3+Tab) To-220Ab Rohs Compliant: Yes

Power Field-Effect Transistor, 60A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:250V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:390W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4332; Current Id Max:60A; N-channel Gate Charge:99nC; Package / Case:TO-220AB; Power Dissipation Pd:390W; Power Dissipation Pd:390mW; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V