Infineon IRFB4310ZPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 4.8 Milliohms;ID 120A;TO-220AB;PD 250W

Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon NChannelMOSTube, Vds=100 V, 127 A, TO-220ABencapsulation, Through hole mounting

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 250 W

Trans MOSFET N-CH 100V 127A 3-Pin(3+Tab) TO-220AB Tube

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:127A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4310; Current Id Max:140A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:250W; Power Dissipation Pd:250mW; Pulse Current Idm:560A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.