Infineon IRF7425PBF
$ 1.02
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRF7425TRPBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
Beschreibungen
Beschreibungen von Infineon IRF7425PBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
Single P-Channel 20 V 8.2 mOhm 87 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 20V 15A 8-Pin SOIC Tube
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
MOSFET, P, 20V, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:20V; On Resistance Rds(on):8.2mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-15A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:-1.2V; Voltage Vgs Rds on Measurement:4.5V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance8.2 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance7.98 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
On-State Resistance8.2 mΩ
Package Quantity3800
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max8.2 mΩ
Recovery Time180 ns
Resistance8.2 MΩ
Rise Time20 ns
TerminationSMD/SMT
Threshold Voltage-1.2 V
Turn-Off Delay Time230 ns
Turn-On Delay Time13 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen