Beschreibungen von Infineon IRF7204TRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS +/-12V
Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R / MOSFET P-CH 20V 5.3A 8-SOIC
Single P-Channel 20 V 0.1 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
IRF7204TRPBF,MOSFET, P-CHANNEL , -20V, -5.3A, 60 MOHM, 25 NC
MOSFET P-CH 20V 5.3A 8SO P-Channel 20 V 5.3A (Ta) 2.5W (Tc) Surface Mount 8-SO
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
2.5W(Tc) 12V 2.5V@ 250µA 25nC@ 10 V 1individualPChannel 20V 60mΩ@ 5.3A,10V 5.3A 860pF@10V SOIC-8 SMD mount 1.75mm(height)
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-5.3A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 12 / Fall Time ns = 68 / Rise Time ns = 26 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5