Infineon IPD60R180CM8XTMA1

N-Ch MOSFET 600V 18A 127W(Tc) 4.7V@140µA 17nC@10V 180mΩ@5.6A, 10V 743pF@400V SMD
$ 1.006
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Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Newark
2
IPD60R180CM8XTMA1
2.500
1
Cut Tape
USD
3,130
3,130
1,470
1,210
1,170
Mouser
726-IPD60R180CM8XTMA
2.229
1
Tape & Reel
USD
2,830
1,390
1,170
0,919
0,892
Avnet
IPD60R180CM8XTMA1
0
2500
USD
0,810
13h
Arrow Electronics
IPD60R180CM8XTMA1
0
2500
USD
0,769
DigiKey
2
448-IPD60R180CM8XTMA1CT-ND
2.435
1
Cut Tape
USD
2,830
1,823
1,250
1,006
1,006

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Lieferkette

Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2024-03-22
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Beschreibungen

Beschreibungen von Infineon IPD60R180CM8XTMA1, die von den Distributoren bereitgestellt werden.

N-Ch MOSFET 600V 18A 127W(Tc) 4.7V@140µA 17nC@10V 180mΩ@5.6A,10V 743pF@400V SMD
Unikeyic (ICkey)
Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R
Verical
N-Channel 600 V 18A (Tj) 127W (Tc) Surface Mount PG-TO252-3-313
Future Electronics
Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252
IHS
MOSFET, N-CH, 600V, 18A, TO-252;
element14 APAC
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Infineon

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  • INFIENON
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  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA