Infineon BSS123IXTSA1

Mosfet, N-Ch, 100V, 0.19A, Sot-23 Rohs Compliant: Yes |Infineon Technologies BSS123IXTSA1

TRANSISTOR, MOSFET, N-CHANNEL, SMALL SIGNAL, 100V, 0.19A, ENHANCEMENT MODE

Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 190 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 3.2 / Turn-OFF Delay Time ns = 7.4 / Turn-ON Delay Time ns = 2.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

The OptiMOS™ N-channel enhancement mode MOSFET BSS123I 100 V in SOT-23-3 package features low RDS(on) of 6 Ohm (at VGS 10 V).With an optimal price/performance ratio and small footprint packages Infineon's small signal and small power MOSFETs are the best fit for a wide range of applications and circuits. These include low voltage drives, linear battery charger, battery protection, load switches, DC-DC converters, reverse polarity protection and many more.Small signal/small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. Enhancement and depletion-mode options, as well as Industry qualification make Infineon’s portfolio the best fit for industry and consumer markets.