Infineon BGS12PL6BOARDTOBO1

BOARD BGS12PL6 RF MOS / - BGS12PL6 Switch, SPDT 30MHz ~ 4GHz Evaluation Board

Development kits/Accessories

BOARD BGS12PL6 RF MOS

BGS12PL6 general purpose high RF power SPDT switch is designed to cover a broad range of high RF power applications from 30 MHz to 4 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design of its single pole double throw configuration offers high design flexibility. This single supply device integrates on-chip CMOS logic driven by a simple, single-pin CMOS / TTL compatible control input signal. The 0.1 dB compression point exceeds the switchs maximum input power level of 35 dBm, resulting in high linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36 dB in the 1 GHz, 0.46 dB in the 2 GHz and 0.6 dB in the 3 GHz range. | Summary of Features: 2 high-linearity TRx paths with power handling capability of up to 35 dBm; All ports fully symmetrical; Low insertion loss; Low harmonic generation; High port-to-port isolation; 0.03 to 4 GHz coverage; High ESD robustness; On-chip control logic; Very small leadless and halogen free package TSLP-6-4 (0.7x1.1mm2) with super low height of 0.31 mm