Diodes Inc. ZXTP2027FTA
$ 0.421
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Bestandsverlauf
3-Monats-Trend: -6.22%
CAD-Modelle
0 models available
Alternative Teile
0 Teile verfügbar
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-27
Lifecycle StatusProduction (Last Updated: 1 month ago)
Verwandte Teile
Diodes Inc.ZXTP19060CFFTA
Bipolar (BJT) Single Transistor, PNP, 60 V, 4 A, 1.5 W, SOT-23F, Surface Mount
onsemiFJV4113RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
onsemiFJV4114RMTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.DDTB113ZC-7-F
DDTB Series PNP 40 V 500 mA Pre-Biased Surface Mount Transistor - SOT-23-3
Diodes Inc.DDTB114EC-7-F
DDTBxx Series 50 V 500 mA PNP Small Signal Surface Mount Transistor - SOT-23-3
onsemiFJV4102RMTF
PNP 250 mW 50 V 100 mA Surface Mount Epitaxial Silicon Transistor - SOT-23-3
Beschreibungen
Beschreibungen von Diodes Inc. ZXTP2027FTA, die von den Distributoren bereitgestellt werden.
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ZXTP2027F Series 60 V 4 A PNP SMT Medium Power Transistor - SOT-23
60V PNP MEDIUM POWER TRANSISTOR IN SOT23 VCEO=60V VEBO=7V IC=4A
Trans GP BJT PNP 60V 4A 1560mW 3-Pin SOT-23 T/R
PNP TRANSISTOR 60V 4A SOT23 RoHSconf
240mV@ 200mA,4A PNP 1.56W 7V 20nA 100V 60V 4A SOT-23-3 1.12mm
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:60V; Typ Gain Bandwidth ft:165MHz; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23 (TO-236); Case Style:SOT-23 (TO-236); Current Ic hFE:10mA; Max Current Gain Hfe:145; Max Current Ic:4A; Max Current Ic Continuous a:-4A; Max Power Dissipation Ptot:1.2W; Max Voltage Vce Sat:-25mV; Min DC Current Gain Hfe:100; Min Hfe:100; Power Dissipation:1.2W; SMD Marking:951; Termination Type:SMD; Transistor Type:Bipolar Medium Power; Typ Hfe:250; Voltage Vcbo:100V; Current, Ic hfe -Do Not Use See ID 1182:10mA
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: -6.22%
CAD-Modelle
0 models available
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-60 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current-4 A
Current Rating-4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-7 V
Frequency165 MHz
Gain Bandwidth Product165 MHz
hFE Min20
Max Breakdown Voltage60 V
Max Collector Current4 A
Max Frequency165 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.56 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation1.56 W
Schedule B8541290080
Transition Frequency165 MHz
Voltage Rating (DC)-60 V
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen