Diodes Inc. ZXTP07012EFFTA
$ 0.309
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Bestandsverlauf
3-Monats-Trend: -11.34%
CAD-Modelle
0 models available
Alternative Teile
0 Teile verfügbar
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-09-14
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Beschreibungen
Beschreibungen von Diodes Inc. ZXTP07012EFFTA, die von den Distributoren bereitgestellt werden.
Power Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ZXTP07012EFF Series PNP 12 V 1.5 A Medium Power Transistor SMT - SOT-23F
Trans GP BJT PNP 12V 4A 3-Pin SOT-23F T/R
Trans, Pnp, 12V, 4A, 150Deg C, 1.5W Rohs Compliant: Yes |Diodes Inc. ZXTP07012EFFTA
TRANS, PNP, 12V, 4A, 150DEG C, 1.5W; Available until stocks are exhausted
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: -11.34%
CAD-Modelle
0 models available
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight48.789529 mg
Technical
Collector Base Voltage (VCBO)12 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage-75 mV
Collector Emitter Voltage (VCEO)12 V
Continuous Collector Current-4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-7 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min150
Max Breakdown Voltage12 V
Max Collector Current4 A
Max Frequency250 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation2 W
Schedule B8541290080
Transition Frequency250 MHz
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen