Diodes Inc. ZXMC3F31DN8TA
$ 0.351
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMC3F31DN8TA | 450 | 1 | Cut Tape | ||||||||
| TME | ZXMC3F31DN8TA | 444 | 1 | 22h | ||||||||
| DigiKey | ZXMC3F31DN8TADICT-ND | 3.350 | 1 | Cut Tape | ||||||||
| Avnet | ZXMC3F31DN8TA | 0 | 500 | 3h | ||||||||
| Arrow Electronics | ZXMC3F31DN8TA | 0 | 500 |
Bestandsverlauf
3-Monats-Trend: -47.40%
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-05
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
Diodes Inc.DMC3025LSD-13
Dual N/P-Channel 30 V 32/85 mOhm 4.6/5.1 nC 1.2 W Silicon SMT Mosfet SOIC-8
Diodes Inc.DMC3028LSDX-13
Dual N/P-Channel 30 V 35/41 mOhm 6/10.9 nC 1.2 W Silicon SMT Mosfet - SOIC-8
InfineonIRF7421D1TRPBF
30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7421D1TRPBF
InfineonIRF7603TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.035Ohm;ID 5.6A;SO-8;PD 1.8W;VGS +/-20V;-55
InfineonIRF7406TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
Beschreibungen
Beschreibungen von Diodes Inc. ZXMC3F31DN8TA, die von den Distributoren bereitgestellt werden.
Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8
2.1W 20V 3V@ 250¦ÌA 12.9nC@ 10V 2N+2P 30V 24m¦¸@ 7A,10V 6.8A,4.9A 608pF@15V SOIC-8
Mosfet, Dual, N/P-Ch, 30V, 7.3A Rohs Compliant: Yes |Diodes Inc. ZXMC3F31DN8TA
30V SO8 Complementary dual enhancement mode MOSFET, N+P, 30V VDS, 20±V VGS
Diodes Inc SCT
Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: -47.40%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance608 pF
Max Operating Temperature150 °C
Max Power Dissipation2.35 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.1 W
Rds On Max24 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time1.9 ns
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen