Diodes Inc. ZX5T3ZTA
$ 0.329
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-04
Lifecycle StatusProduction (Last Updated: 5 months ago)
Verwandte Teile
Diodes Inc.ZXTP2008ZTA
ZXTP2008Z Series 30 V 5.5 A PNP Low Saturation Medium Power Transistor - SOT-89
ROHM2SB1132T100R
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SB1132T100Q
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Beschreibungen
Beschreibungen von Diodes Inc. ZX5T3ZTA, die von den Distributoren bereitgestellt werden.
40V 3W 200@0.5A,2V 5.5A PNP SOT-89-3 Bipolar (BJT) ROHS
ZX5T3Z Series PNP 5.5 A 40 V SMT Silicon Medium Power Transistor - SOT-89-3
Power Bipolar Transistor, 5.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 5.5A 3000mW 4-Pin(3+Tab) SOT-89 T/R
PNP TRANSISTOR 40V 5,5A SOT89 RoHSconf
185mV@ 550mA,5.5A PNP 3W 7.5V 20nA 50V 40V 5.5A SOT-89-3 1.6mm
Trans, Pnp, 40V, 5.5A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZX5T3ZTA
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Technische Spezifikationen
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage185 mV
Collector Emitter Voltage (VCEO)40 V
Continuous Collector Current-5.5 A
Current Rating-5.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-7.5 V
Frequency152 MHz
Gain Bandwidth Product152 MHz
hFE Min110
Max Breakdown Voltage40 V
Max Collector Current5.5 A
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityPNP
Power Dissipation3 W
Schedule B8541290080
Transition Frequency152 MHz
Voltage Rating (DC)-40 V
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen