onsemi D44H11G
Production
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating10 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min60
Max Collector Current10 A
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)80 V
Dimensions
Height9.28 mm
Length10.28 mm
Width4.82 mm
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.456
$ 0.487
Stock
790,089
252,166
Authorized Distributors
10
8
Mount
-
Through Hole
Case/Package
TO-220-3
TO-220
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
10 A
10 A
Transition Frequency
50 MHz
-
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
60
60
Power Dissipation
2 W
50 W
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi D44H11G.
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Descriptions
Descriptions of onsemi D44H11G provided by its distributors.
ON Semi D44H11G NPN Bipolar Transistor, 10 A, 80 V, 3-Pin TO-220AB
Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Transistor, TO-220, NPN, 80V
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 60hFE; Transistor Case Styl
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
Bipolar Transistor, Npn, 80V To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:70W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi D44H11G.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating10 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min60
Max Collector Current10 A
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)80 V
Dimensions
Height9.28 mm
Length10.28 mm
Width4.82 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements