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Semelab BUZ900P

MOSFET N-Channel 160V 8A TO-247

Datasheet

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Authorized Distributors

Seller SKU Stock Purchase 1 10 100 1,000 10,000
Newark
96K7202 324 Buy Now »
USD
18.43 18.43 15.83 15.13 15.13
Farnell
1208682 324 Buy Now »
GBP
10.89 10.89 8.55 7.22 7.06
element14 APAC
1208682 0 ··
SGD
18.19 17.56 16.02 14.08 13.83
RS Components
841047 45 Buy Now »
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Non-Authorized Dealers

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North Star Micro
BUZ900P Contact ··

Descriptions

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:160V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Capacitance Ciss Typ:500pF; Current Id Max:8A; Current Temperature:25°C; Device Marking:BUZ900P; Diode Flywheel:Id(peak) = 8 A; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction to Case Thermal Resistance A:1°C/W; No. of Transistors:1; Package / Case:TO-247; Pin Configuration:G(1), S(2), D(3); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Termination Type:Through Hole; Turn Off Time:50ns; Turn On Time:100ns; Voltage Vds Typ:160V; Voltage Vgs Max:14V
element14 APAC
MOSFET, N, TO-247
North Star Micro
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:160V; Current, Id Cont:8A; Resistance, Rds On:1.5ohm; Voltage, Vgs th Typ:1.5V; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Device Marking:BUZ900P; Diode, Flywheel:Id(peak) = 8 A; No. of Pins:3; Pin Configuration:G(1), S(2), D(3); Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Thermal Resistance, Junction to Case A:1°C/W; Time, t Off:50ns; Time, t On:100ns; Transistors, No. of:1; Typ Capacitance Ciss:500pF; Voltage, Vds Max:160V; Voltage, Vgs Max:14V
Farnell
; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:8A; On Resistance, Rds(on):1.5ohm; Package/Case:TO-247; Power Dissipation, Pd:125W; Drain-Source Breakdown Voltage:160V ;RoHS Compliant: Yes
Newark
MOSFET N-Channel 160V 8A TO-247
RS Components

Technical Specifications

Mounting Type Through Hole
Power Dissipation 125 W
RoHS Compliant
Polarity N-Channel
Continuous Drain Current (Ids) 8 A
Number of Pins 3
Drain to Source Voltage (Vds) 160 V
REACH SVHC Compliance No SVHC

Documents

Farnell
Datasheet 4 pages 9 years ago
Datasheet 1 page 10 years ago
Datasheet 3 pages 16 years ago

Images

Alternate Names

MAGNATEC BUZ900P
Semelab Ltd BUZ900P
Semelab (TT Electronics) BUZ900P

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