onsemi BUZ11-NR4941

BUZ11: Series 50 V 30 mOhm 75 W Through Hole N-channel Power Mosfet - TO-220AB
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220-3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)50 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation75 W
Schedule B8541290080
Turn-Off Delay Time180 ns
Turn-On Delay Time30 ns
Dimensions
Height20.4 mm

Documents

Download datasheets and manufacturer documentation for onsemi BUZ11-NR4941.

Future Electronics
Datasheet6 pages23 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
TME
Datasheet6 pages23 years ago
Upverter
Datasheet7 pages2 years ago
Technical Drawing1 page4 years ago

Inventory History

3 month trend:
-80.75%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi BUZ11-NR4941.

Related Parts

Descriptions

Descriptions of onsemi BUZ11-NR4941 provided by its distributors.

BUZ11: Series 50 V 30 mOhm 75 W Through Hole N-channel Power Mosfet - TO-220AB
N-Channel Power MOSFET, 50V, 30A, 40mΩ
MOSFET, N-CH, 50V, 30A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • BUZ11NR4941

Technical Specifications

Physical
Case/PackageTO-220-3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)50 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation75 W
Schedule B8541290080
Turn-Off Delay Time180 ns
Turn-On Delay Time30 ns
Dimensions
Height20.4 mm

Documents

Download datasheets and manufacturer documentation for onsemi BUZ11-NR4941.

Future Electronics
Datasheet6 pages23 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
TME
Datasheet6 pages23 years ago
Upverter
Datasheet7 pages2 years ago
Technical Drawing1 page4 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago