onsemi BSS138W

N-Channel MOSFET, Logic Level Enhancement Mode, 50V , 210mA, 3.5Ω
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)210 mA
Current2 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time6.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance38 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation340 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation340 mW
Rds On Max3.5 Ω
Resistance3.5 Ω
Rise Time1.9 ns
Schedule B8541210080
Threshold Voltage1.3 V
Turn-Off Delay Time6.7 ns
Turn-On Delay Time2.3 ns
Voltage50 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm

Documents

Download datasheets and manufacturer documentation for onsemi BSS138W.

Newark
Datasheet6 pages13 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page17 years ago
Future Electronics
Datasheet5 pages21 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+10.82%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi BSS138W.

Related Parts

Descriptions

Descriptions of onsemi BSS138W provided by its distributors.

N-Channel MOSFET, Logic Level Enhancement Mode, 50V , 210mA, 3.5Ω
N-Channel 50 V 3.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-323
Transistor, MOSFET, N-channel, 50V, 210MA, logic level, fast switching, SOT323 | ON Semiconductor BSS138W
MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Source Voltage Vds:50V; On Resistance
This N-Channel enhancement mode field effect transistor. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS138W is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 210mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 340mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 210 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 340

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • BSS138W.

Technical Specifications

Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)210 mA
Current2 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time6.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance38 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation340 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation340 mW
Rds On Max3.5 Ω
Resistance3.5 Ω
Rise Time1.9 ns
Schedule B8541210080
Threshold Voltage1.3 V
Turn-Off Delay Time6.7 ns
Turn-On Delay Time2.3 ns
Voltage50 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm

Documents

Download datasheets and manufacturer documentation for onsemi BSS138W.

Newark
Datasheet6 pages13 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page17 years ago
Future Electronics
Datasheet5 pages21 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement4 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago