onsemi BSS138L
Production
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time5.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation225 mW
Rds On Max3.5 Ω
Rise Time1.8 ns
Schedule B8541210080
Threshold Voltage1.25 V
Turn-Off Delay Time5.3 ns
Turn-On Delay Time2.2 ns
Dimensions
Height1.11 mm
Inventory History
3 month trend: -33.14%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi BSS138L.
onsemi
Farnell
Newark
Fairchild Semiconductor
Arrow.cn
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.061
$ 0.068
Stock
4,254,632
23,469,774
Authorized Distributors
6
11
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
Drain to Source Voltage (Vdss)
50 V
50 V
Continuous Drain Current (ID)
200 mA
220 mA
Threshold Voltage
1.25 V
1.3 V
Rds On Max
3.5 Ω
3.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
225 mW
360 mW
Input Capacitance
50 pF
27 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi BSS138L.
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Descriptions
Descriptions of onsemi BSS138L provided by its distributors.
N-Channel Power MOSFET, Logic Level, 50V, 200mA, 3.5Ω
N-Channel 50 V 3.5 O 2.4 nC Logic Level Enhancement Mode Mosfet - SOT-23
Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CHANNEL, 50V, 0.2A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 2.78ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, lowcurrent applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply and switching applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 200 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 350
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -33.14%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time5.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation225 mW
Rds On Max3.5 Ω
Rise Time1.8 ns
Schedule B8541210080
Threshold Voltage1.25 V
Turn-Off Delay Time5.3 ns
Turn-On Delay Time2.2 ns
Dimensions
Height1.11 mm
Documents
Download datasheets and manufacturer documentation for onsemi BSS138L.
onsemi
Farnell
Newark
Fairchild Semiconductor
Arrow.cn