Infineon BSS126H6327XTSA2
Production
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)17 mA
Drain to Source Resistance700 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance21 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance500 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation360 mW
Rds On Max700 mΩ
Resistance700 Ω
Rise Time9.7 ns
Schedule B8541210080
Turn-Off Delay Time14 ns
Turn-On Delay Time6.1 ns
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm
Inventory History
3 month trend: +72.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.17
$ 0.235
Stock
6,030,412
2,217,392
Authorized Distributors
15
11
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
17 mA
21 mA
Threshold Voltage
-
-
Rds On Max
700 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
360 mW
500 mW
Input Capacitance
21 pF
-
Engineering Resources
View Evaluation kits and Reference designs for Infineon BSS126H6327XTSA2.
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Descriptions
Descriptions of Infineon BSS126H6327XTSA2 provided by its distributors.
Transistor: N-MOSFET; unipolar; 600V; 21mA; 700ohm; -55+150 deg.C; SMD; SOT23
Power MOSFET, N Channel, 600 V, 21 mA, 500 Ohm, SOT-23, 3 Pins, Surface Mount
Single N-Channel 600 V 500 Ohm 1.4 nC SIPMOS® Small Signal Mosfet - SOT-23
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101
SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 600V, 21MA, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:21mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):280ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-2V; Power Dissipation Pd:500mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. | Summary of Features: Depletion mode; dv/dt rated; Available with V GS(th) indicator on the reel; Halogen free; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 60 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +72.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)17 mA
Drain to Source Resistance700 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance21 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance500 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation360 mW
Rds On Max700 mΩ
Resistance700 Ω
Rise Time9.7 ns
Schedule B8541210080
Turn-Off Delay Time14 ns
Turn-On Delay Time6.1 ns
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements