onsemi BSR14

Single Bipolar Transistor, NPN, 40 V, 800 mA, 350 mW, SOT-23, 3 Pins, Surface Mount

Trans GP BJT NPN 40V 0.8A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

Trans GP BJT NPN 40V 0.8A 350mW 3-Pin SOT-23 T/R / TRANS NPN 40V 0.8A SOT23

NPN SWITCHING TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

40V 350mW 800mA 100@150mA10V 300MHz 1V@500mA50mA NPN -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

TRANSISTOR, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 800mA; DC Current Gain hFE: 300; No. of Pins: 3

This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics.

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 800 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 350 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260