Nexperia BSH111BKR

Trans Mosfet N-ch 55V 0.21A 3-PIN SOT-23 T/r / Mosfet N-ch 55V SOT-23
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)210 mA
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance2.3 Ω
Drain to Source Voltage (Vdss)55 V
Fall Time4.8 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance30 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation302 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel (TR)
Power Dissipation302 mW
Rds On Max4 Ω
Rise Time8.4 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time12.6 ns
Turn-On Delay Time8.3 ns
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Nexperia BSH111BKR.

Newark
Datasheet16 pages9 years ago
Nexperia
Datasheet17 pages9 years ago
Future Electronics
Datasheet16 pages9 years ago
Upverter
Technical Drawing5 pages5 years ago

Inventory History

3 month trend:
-9.05%

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 hours ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 4 hours ago)

Engineering Resources

View Evaluation kits and Reference designs for Nexperia BSH111BKR.

Related Parts

Descriptions

Descriptions of Nexperia BSH111BKR provided by its distributors.

Trans MOSFET N-CH 55V 0.21A 3-Pin SOT-23 T/R / MOSFET N-CH 55V SOT-23
BSH111 Series 55 V 364 mW 0.5 nC N-Channel Surface Mount MOSFET - SOT-23
MOSFET, N-CH, 55V, 0.21A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Source Voltage Vds:55V; On Resistance
Small Signal Field-Effect Transistor, 0.21A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 55V, 0.21A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 210mA; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 302mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Manufacturer Aliases

Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NEXP
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • Nexperi
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/PHILIPS
  • NEX-NXP

Part Number Aliases

This part may be known by these alternate part numbers:

  • 934068056215
  • BSH111BKR.

Technical Specifications

Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)210 mA
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance2.3 Ω
Drain to Source Voltage (Vdss)55 V
Fall Time4.8 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance30 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation302 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel (TR)
Power Dissipation302 mW
Rds On Max4 Ω
Rise Time8.4 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time12.6 ns
Turn-On Delay Time8.3 ns
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Nexperia BSH111BKR.

Newark
Datasheet16 pages9 years ago
Nexperia
Datasheet17 pages9 years ago
Future Electronics
Datasheet16 pages9 years ago
Upverter
Technical Drawing5 pages5 years ago

Compliance

Environmental Classification
Lead FreeLead Free
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago