Infineon BSC030N08NS5ATMA1

Single N-Channel 80 V 3 mOhm 61 nC OptiMOS™ Power Mosfet - TDSON-8
Production

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Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.3 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance3 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max3 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time20 ns
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Infineon BSC030N08NS5ATMA1.

Infineon SCT
Datasheet12 pages0 years ago

Inventory History

3 month trend:
+17.37%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon BSC030N08NS5ATMA1.

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Descriptions

Descriptions of Infineon BSC030N08NS5ATMA1 provided by its distributors.

Single N-Channel 80 V 3 mOhm 61 nC OptiMOS™ Power Mosfet - TDSON-8
MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:80V; On Resistance
Mosfet, N-Ch, 80V, 100A, 150Deg C, 139W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC030N08NS5ATMA1
MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BSC030N08NS5
  • BSC030N08NS5.
  • SP001077098

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.3 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance3 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max3 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time20 ns
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Infineon BSC030N08NS5ATMA1.

Infineon SCT
Datasheet12 pages0 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
RoHSCompliant
Compliance Statements