NXP Semiconductors BLF278

Rf Fet Transistor, 125 V, 18 A, 500 W, 400 Mhz, 520 Mhz, Sot-262A1 Rohs Compliant: Yes
In Stock
Datasheet

Price and Stock

Technical Specifications

Physical
Number of Pins5
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage125 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)125 V
Gain20 dB
Max Operating Temperature200 °C
Max Power Dissipation500 W
Output Power300 W
PackagingBulk
Power Dissipation500 W
Voltage Rating (DC)125 V

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors BLF278.

Newark
Datasheet23 pages27 years ago
Farnell
Datasheet120 pages12 years ago

Inventory History

3 month trend:
+8.20%

Engineering Resources

View Evaluation kits and Reference designs for NXP Semiconductors BLF278.

Related Parts

Descriptions

Descriptions of NXP Semiconductors BLF278 provided by its distributors.

Rf Fet Transistor, 125 V, 18 A, 500 W, 400 Mhz, 520 Mhz, Sot-262A1 Rohs Compliant: Yes
Trans RF MOSFET N-CH 125V 18A 5-Pin CDFM
2 CHANNEL VHF BAND Si N-CHANNEL RF POWER MOSFET
VHF push-pull power MOS transistor
RF PFET, 2-ELEMENT, VERY HIGH FR
MOSFET, N, VHF, SOT-262; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:18A; Power Dissipation Pd:500W; Operating Frequency Range:400MHz to 520MHz; RF Transistor Case:SOT-262A1; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Junction Temperature Tj Max:200°C; On Resistance Rds(on):200mohm; Package / Case:SOT-262A1; Power Dissipation Max:500W; Power Dissipation Pd:500W; Power Dissipation Pd:500W; Rds(on) Test Voltage Vgs:10V; Storage Temperature Max:150°C; Storage Temperature Min:-65°C; Transistor Case Style:SOT-262A1; Transistor Polarity:N Channel; Voltage Vds:125V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2V

Manufacturer Aliases

NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:

  • NXP
  • PHILIPS
  • PHIL
  • PHI
  • PHILLIPS
  • NXP USA Inc
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • Philips Semiconductor
  • NXP/PHILIPS
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • PHILIPS ECG
  • NXP / Freescale
  • PHILL
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

Technical Specifications

Physical
Number of Pins5
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage125 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)125 V
Gain20 dB
Max Operating Temperature200 °C
Max Power Dissipation500 W
Output Power300 W
PackagingBulk
Power Dissipation500 W
Voltage Rating (DC)125 V

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors BLF278.

Newark
Datasheet23 pages27 years ago
Farnell
Datasheet120 pages12 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago