Summary of Features: High gain low noise RF transistor; Small package 1.4 x 0.8 x 0.59 mm; Outstanding noise figure F = 0.7 dB at 1.8 GHz ,Outstanding noise figure F = 1.3 dB at 6 GHz; Maximum stable gain :Gms = 21 dB at 1.8 GHz,Gma = 10 dB at 6 GHz; Gold metallization for extra high reliability; Pb-free (RoHS compliant) package1); Qualified according AEC Q101
Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 2.3 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 7.5 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 65 / Power Dissipation (Pd) mW = 185 / Package Type = TSFP / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel