Infineon BCR583E6327HTSA1

BCR583 Series PNP 50 V 500 mA SMT Silicon Digital Transistor - SOT-23-3
NRND

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)10 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating-500 mA
Element ConfigurationSingle
hFE Min70
Input Resistance10 kΩ
Max Breakdown Voltage50 V
Max Collector Current500 mA
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-65 °C
Package Quantity3000
PackagingCut Tape (CT)
PolarityPNP
Power Dissipation330 mW
Schedule B8541210080
Transition Frequency150 MHz
Voltage Rating (DC)-50 V
Dimensions
Height900 µm
Length2.9 mm
Width1.3 mm

Documents

Download datasheets and manufacturer documentation for Infineon BCR583E6327HTSA1.

Upverter
Datasheet6 pages12 years ago
iiiC
Datasheet6 pages16 years ago
Sierra IC
Datasheet6 pages22 years ago

Inventory History

3 month trend:
-0.28%

Supply Chain

Lifecycle StatusNRND (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon BCR583E6327HTSA1.

Related Parts

Descriptions

Descriptions of Infineon BCR583E6327HTSA1 provided by its distributors.

BCR583 Series PNP 50 V 500 mA SMT Silicon Digital Transistor - SOT-23-3
Trans Digital BJT PNP 50V 500mA 3-Pin SOT-23 T/R - Bulk (Alt: BCR583)
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PNP 50V 500mA 150MHz 0.33W; BCR583E6327HTSA1 BCR583 BCR583E6327HTSA1 BCR583E6327
PNP Silicon Digital Transistor, SOT23, RoHS
Infineon SCT
PNP Silicon Digital Transistor | Summary of Features: Built in bias resistor (R1= 10 k, R2= 10 k); Pb-free (RoHS compliant) package; Qualified according AEC Q101

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BCR 583
  • BCR 583 E6327
  • BCR583
  • BCR583 E6327
  • BCR583-E6327
  • BCR583E6327
  • SP000012278

Technical Specifications

Physical
Case/PackageSOT
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)10 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating-500 mA
Element ConfigurationSingle
hFE Min70
Input Resistance10 kΩ
Max Breakdown Voltage50 V
Max Collector Current500 mA
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-65 °C
Package Quantity3000
PackagingCut Tape (CT)
PolarityPNP
Power Dissipation330 mW
Schedule B8541210080
Transition Frequency150 MHz
Voltage Rating (DC)-50 V
Dimensions
Height900 µm
Length2.9 mm
Width1.3 mm

Documents

Download datasheets and manufacturer documentation for Infineon BCR583E6327HTSA1.

Upverter
Datasheet6 pages12 years ago
iiiC
Datasheet6 pages16 years ago
Sierra IC
Datasheet6 pages22 years ago

Compliance

Environmental Classification
Halogen FreeNot Halogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements