Infineon BCR523E6327HTSA1

Trans Digital BJT NPN 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R
NRND

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Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min70
Input Resistance1 kΩ
Max Breakdown Voltage50 V
Max Collector Current500 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation330 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Infineon BCR523E6327HTSA1.

TME
Datasheet8 pages12 years ago
Upverter
Datasheet8 pages16 years ago
Farnell
Datasheet6 pages15 years ago
Datasheet9 pages17 years ago
Datasheet7 pages19 years ago
Datasheet4 pages19 years ago
iiiC
Datasheet8 pages16 years ago

Inventory History

3 month trend:
-10.36%

Supply Chain

Lifecycle StatusNRND (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon BCR523E6327HTSA1.

Related Parts

Descriptions

Descriptions of Infineon BCR523E6327HTSA1 provided by its distributors.

Trans Digital BJT NPN 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R
NPN 50 V 500 mA 100 MHz 330 mW SMT Pre-Biased Bipolar Transistor-PG-SOT23
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
NPN 50V 500mA 100MHz 0.33W; BCR523E6327HTSA1 BCR523E6433HTMA1 BCR523E6433 BCR523E6327
TRANSISTOR, DIGITAL, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:500mA; DC Current Gain hFE:70; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:500mA; Collector Emitter Voltage Vces:300mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:5mA; Full Power Rating Temperature:79°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:70; Hfe Typ:70; No. of Transistors:1; Package / Case:SOT-23; Pin Format:1B, 2E, 3C; Power Dissipation Pd:330mW; Power Dissipation Ptot Max:330mW; Resistance R1:1kohm; Resistance R2:10kohm; SMD Marking:XGs; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V; Voltage Vi on:12V; Voltage Vi on @ Ic 2mA:0.4V
NPN Silicon Digital Transistors | Summary of Features: Switching circuit, inverter circuit, driver circuit; Built in bias resistor (R1= 1 k, R2= 10 k); BCR523U: Two (galvanic) internal isolated transistors with good matching in one package; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / DC Current Gain (hFE) = 70 / Power Dissipation (Pd) mW = 330 / Typical Input Resistor kOhm = 1 / Typical Resistor Ratio = 0.1 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Operating Frequency MHz = 100

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BCR 523 E6327
  • BCR523
  • BCR523 E6327
  • BCR523-E6327
  • BCR523E6327
  • SP000010851

Technical Specifications

Physical
Case/PackageSOT
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min70
Input Resistance1 kΩ
Max Breakdown Voltage50 V
Max Collector Current500 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation330 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Infineon BCR523E6327HTSA1.

TME
Datasheet8 pages12 years ago
Upverter
Datasheet8 pages16 years ago
Farnell
Datasheet6 pages15 years ago
Datasheet9 pages17 years ago
Datasheet7 pages19 years ago
Datasheet4 pages19 years ago
iiiC
Datasheet8 pages16 years ago

Compliance

Environmental Classification
Halogen FreeNot Halogen Free
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements