TRANSISTOR, DIGITAL, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:500mA; DC Current Gain hFE:70; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:500mA; Collector Emitter Voltage Vces:300mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:5mA; Full Power Rating Temperature:79°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:70; Hfe Typ:70; No. of Transistors:1; Package / Case:SOT-23; Pin Format:1B, 2E, 3C; Power Dissipation Pd:330mW; Power Dissipation Ptot Max:330mW; Resistance R1:1kohm; Resistance R2:10kohm; SMD Marking:XGs; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V; Voltage Vi on:12V; Voltage Vi on @ Ic 2mA:0.4V
NPN Silicon Digital Transistors | Summary of Features: Switching circuit, inverter circuit, driver circuit; Built in bias resistor (R1= 1 k, R2= 10 k); BCR523U: Two (galvanic) internal isolated transistors with good matching in one package; Pb-free (RoHS compliant) package; Qualified according AEC Q101