Infineon BCR112E6327HTSA1
NRND
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-BCR112E6327 | 49,506 | 1 | Tape & Reel | 1d | ||||||||
| BCR112E6327HTSA1 | 3,000 | 1 | Cut Tape | 18h | ||||||||
| BCR112E6327HTSA1 | 3,000 | 3K | 20h | |||||||||
| BCR112E6327HTSA1CT-ND | 314 | 1 | Cut Tape | 18h | ||||||||
| TDSTD8459 | 45,000 | 3K | 7h |
Technical Specifications
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
hFE Min20
Input Resistance4.7 kΩ
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency140 MHz
Voltage Rating (DC)50 V
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm
Inventory History
3 month trend: -15.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon BCR112E6327HTSA1.
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Descriptions
Descriptions of Infineon BCR112E6327HTSA1 provided by its distributors.
Bipolar junction transistor, NPN, 100 mA, 50 V, SMD, SOT-23, BCR112E6327
Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R
BCR112 Series NPN 50 V 100 mA SMT Silicon Digital Transistor - SOT-23-3
NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
NPN Silicon Digital Transistor, SOT23, RoHS
Infineon SCT
Digital Trans, 50V, 4.7K/4.7K, Sot-23-3; Transistor Polarity:-; Collector Emitter Voltage V(Br)Ceo:50V; Transition Frequency Ft:-; Power Dissipation Pd:-; Dc Collector Current:-; Dc Current Gain Hfe:-; Transistor Case Style:-; No. Ofrohs Compliant: Yes |Infineon BCR112E6327HTSA1
NPN Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=4.7k, R2=4.7k); Pb-free (RoHS compliant) package; Qualified according AEC Q101
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -15.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
hFE Min20
Input Resistance4.7 kΩ
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency140 MHz
Voltage Rating (DC)50 V
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm
Compliance
Environmental Classification
Halogen FreeNot Halogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements